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| semix ? 2s trench igbt modules semix 302gb176hds preliminary data features ! typical applications " # $ % # remarks ! # & ' ( ( ( # & ' ) ( gb absolute maximum ratings ) * + , # symbol conditions values units igbt - ) * + ' / ( ( 0 - ' * ( + ) * + 1 ( * " 2 ( + ) ) ( " 0 3 4 0 3 4 ) 5 0 6 ( ( " 7 8 ) ( ' ) ( ( 9 7 : ) ( 9 ; ' / ( ( - ' ) * + ' ( < inverse diode 0 = - ' * ( + ) * + 1 2 * " 2 ( + ) > ( " 0 = 3 4 0 = 3 4 ) 5 0 = 6 ( ( " 0 = 4 ' ( 9 ? - ) * + ) ( ( ( " module 0 3 4 > ( ( " - @ 6 ( ? ? ? a ' * ( + @ 6 ( ? ? ? a ' ) * + " , ' ? 6 ( ( ( characteristics ) * + , # symbol conditions min. typ. max. units igbt 7 7 , 0 2 " * , ) * , 2 > , 6 0 7 ( , - ) * + ( , 6 * " - ' ) * + " ( - ) * + ' ' , ) - ' ) * + ( , b ' , ' 7 ' * - ) * + * > , 1 c - ' ) * + / , 2 b c 0 ) ( ( " , 7 ' * - ) * + ? ) ) , 6 * - ' ) * + ? ) , 6 * ) , b ' / , > = ) * , 7 ( ' 4 d ( , / 1 = ( , * 2 = e 7 7 @ 2 ? ? ? a ' * ' 2 * ( # ) ) * 3 7 > , * c ' ) ( ( 6 * 0 ) ( ( " ' 1 ( f # 3 7 > , * c - ' ) * + > > * ' ( * / / f 3 - @ 0 7 g ( , ' h i j semix 302gb176hds 1 18-04-2007 sch ? by semikron semix ? 2s trench igbt modules semix 302gb176hds preliminary data features ! typical applications " # $ % # remarks ! # & ' ( ( ( # & ' ) ( gb characteristics symbol conditions min. typ. max. units inverse diode = 0 = ) ( ( " 9 7 ( - ) * + ? ' , * ' , / - ' ) * + ? ' , 6 * ' , > * = ( - ) * + ' , ' ' , ) - ' ) * + ( , b ' , ' = - ) * + ) c - ' ) * + ) , / c 0 3 3 4 0 = ) ( ( " - ' ) * + ) 1 * " e # i # 1 ' ( ( " i < / / < 7 @ ' * 9 ' ) ( ( 6 1 f 3 - @ k # # ( , ' * h i j module l ' 2 3 m a m ? , @ ) * + ( , / c ' ) * + ' c 3 @ # ( , ( 6 * h i j 4 n 4 * 1 * o 4 4 > ) , * * o ) * ( temperature sensor 3 ' ( ( ) * + 3 ) * * n c ( , 6 b 1 8 * p n c g ' ( ( i ' ) * 3 3 ' ( ( 5 q g ' ( ( i ' ) * ' i @ ' i ' ( ( r 9 q h r 9 g 1 * * ( 8 ) p h this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 302gb176hds 2 18-04-2007 sch ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic semix 302gb176hds 3 18-04-2007 sch ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 typ. transient thermal impedance fig. 10 typ. cal diode forward charact., incl. r cc'+ee' fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovery charge semix 302gb176hds 4 18-04-2007 sch ? by semikron 4 s ) % 7 g semix 302gb176hds 5 18-04-2007 sch ? by semikron |
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